HUR1630CT symbol t est conditions maxim um ratings unit i frms i f a vm t c =130 o c; rectangular , d=0.5 35 2 x 8 a t vj t vjm t stg -55...+175 175 -55...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitiv e; i as =2a; l=180uh v a =1.5 . v r typ .; f=10khz; repetitiv e 60 0.5 0.2 a mj i ar a p tot t c =25 o c m d mounting torque typical 60 0.4...0.6 2 w nm w eight g high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode HUR1630CT v rsm v 300 v rrm v 300 dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions t o-220ab a=anode , c=cathode , t ab=cathode a a c c(tab) a c a
HUR1630CT ad v ant a ges * a v alanche v oltage r ated f or reliab le oper ation * soft re v erse reco v er y f or lo w emi/rfi * lo w i rm reduces: - p o w er dissipation within the diode - t ur n-on loss in the comm utating s witch applica tions * antipar allel diode f or high frequency s witching de vices * antisatur ation diode * sn ub ber diode * f ree wheeling diode in con v er ters and motor control circuits * rectifiers in s witch mode po w er supplies (smps) * inductiv e heating * uninterr uptib le po w er supplies (ups) * ultr asonic cleaners and w elders fea tures * inter national standard pac kage * planar passiv ated chips * v er y shor t reco v er y time * extremely lo w s witching losses * lo w i rm -v alues * soft reco v er y beha viour symbol t est conditions characteristic v alues typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 60 0.25 ua ma i r r thjc r thch 2.5 k/w t rr i f =1a; -di/dt=50a/us; v r =30v ; t vj =25 o c ns i rm v r =100v ; i f =12a; -di f /dt=100a/us; t vj =100 o c 2.4 a i f =10a; t vj =150 o c t vj =25 o c 1.29 1.75 v v f 0.5 30 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
200 600 1000 0 400 800 30 40 50 60 70 0. 0 0001 0. 0001 0. 001 0. 01 0. 1 1 0. 001 0. 0 1 0. 1 1 10 0 4 0 8 0 120 160 0. 6 0. 8 1. 0 1. 2 1. 4 k f t vj c -d i f /d t t s k/ w 0 200 400 600 800 1000 0 4 8 12 16 0. 0 0. 2 0. 4 0. 6 0. 8 v fr di f /d t v 200 600 1000 0 400 800 0 5 10 15 100 1000 0 100 200 300 400 0. 0 0 . 5 1. 0 1 . 5 2. 0 0 10 20 30 i rm q r i f a v f -di f /d t -d i f /d t a/ us a v nc a/ us a/ us t rr ns t fr a/ us s z th j c t vj = 150 c t vj = 100 c t vj = 2 5 c i f = 20a i f = 10a i f = 5 a t vj = 1 0 0 c v r = 150v t vj = 100 c v r = 150v t vj = 100 c v r = 150v t vj = 100 c i f = 10a v fr t fr i rm q r i f = 20a i f = 10a i f = 5 a i f = 20a i f = 10a i f = 5 a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1 .449 0.005 2 0 .558 0.0003 3 0 .493 0.017 HUR1630CT high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
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